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| 型号 | MBT2222ADW1T1G |
| 厂商 | ON Semiconductor |
| 描述 | TRANS NPN GP 600MA 40V SOT-363 |
| MBT2222ADW1T1G PDF |  |
| 代理商 | MBT2222ADW1T1G |
| 产品变化通告 | EDS Rating Update Standardized Format 15/June/2007 Wire Change 08/Jun/2009 |
| 标准包装 | 1 |
| 晶体管类型 | 2 NPN（双） |
| 电流 - 集电极 (Ic)（最大） | 600mA |
| 电压 - 集电极发射极击穿（最大） | 40V |
| Ib、Ic条件下的Vce饱和度（最大） | 1V @ 50mA，500mA |
| 在某 Ic、Vce 时的最小直流电流增益 (hFE) | 100 @ 150mA，10V |
| 功率 - 最大 | 150mW |
| 频率 - 转换 | 300MHz |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装 | SOT-363 |
| 包装 | 标准包装 |
| 其它名称 | MBT2222ADW1T1GOSDKR |
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